wpt2n40 pnp, -32v, -1a, power transistor with 20v n-mosfet descriptions the wpt2n40 is pnp bipolar power transistor with 20v n-mosfet. this device is suitable for use in charging circuit and other power management. standard products are pb-free and halogen-free. features ultra low collector-to-emitter saturation voltage high dc current gain >100 1a continue collector current small package pdfn3x2-8l applications charging circuit other power management in portable equipments pdfn3x2-8l pin configuration (top view) 2n40 = device code yy = year ww = week marking order information device package shipping wpt2n40-8/tr pdfn3x2-8l 3000/reel&tape 1234 5 6 7 8 2n40 yyww 1 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings thermal resistance characteristics a surface mounted on fr-4 board using 1 square inch pad size, 1oz copper b surface mounted on fr-4 board using minimum pad size, 1oz copper c pulse width=300s, duty cycle<2% d maximum junction temperature t j =150c. parameter symbol value unit pnp transistor collector-emitter voltage v ceo -32 v collector-base voltage v cbo -45 v emitter-base voltage v ebo -6 v continues collector current i c -1 a pulse collector current c i cm -6 a n-mosfet drain-source voltage v ds 20 v gate-source voltage v gs 6 v continuous drain current i d 0.69 a pulsed drain current c i dm 1.4 a power dissipation and temperature power dissipation a 1.2 w power dissipation b p d 0.8 w junction temperature t j 150 c lead temperature t l 260 c operation temperature t a -40 ~ 85 c storage temperature range t stg -55 to 150 c parameter symbol value unit junction-to-ambient thermal resistance a r ja 104 c/w junction-to-ambient thermal resistance b r ja 155 c/w wpt2n40 2 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit pnp transistor collector-emitter breakdown voltage bv ceo i c =-10ma, i b =0ma -32 v collector-base breakdown voltage bv cbo i c =-100ua, i e =0ma -45 v emitter-base breakdown voltage bv ebo i e =-1ma, i c =0ma -6 v collector cutoff current i cbo v cb =-40v,i e =0ma -100 na emitter cutoff current i ebo v eb =-5v,i c =0ma -100 na collector-emitter saturation voltage v ce(sat) i c =-2a, i b =-200ma -0.38 -0.5 v base-emitter saturation voltage v be(sat) i c =-2a, i b =-200ma -1 -1.5 v dc current gain h fe v ce =-2v,i c =-1a 100 163 320 n-mosfet drain-source breakdown voltage v( br ) dss v gs =0v, i d =250ua 20 v zero gate voltage drain current i dss v ds =16v, v gs =0v 1 ua gate Csource leakage current i gss v ds =0v, v gs =5v 5 ua gate threshold voltage v gs(th) v ds = v gs , i d =250ua 0.44 0.67 0.86 v v gs =4.5v, i d =0.55a 210 270 m v gs =2.5v, i d =0.55a 250 320 m drain-source on-resistance r ds(on) v gs =1.8v, i d =0.35a 305 390 m input capacitance ciss 50 pf output capacitance coss 13 pf reverse transfer capacitance crss v ds =10v, v gs =0v, f=1mhz 8 pf total gate charge q g(tot) 1.15 nc threshold gate charge q g(th) 0.06 nc gate-source charge q gs 0.15 nc gate-drain charge q gd v ds =10v, v gs =4.5v, i d =0.6a 0.23 nc turn-on delay time td(on) 22 ns turn-on rise time tr 80 ns turn-off delay time td(off) 700 ns turn-off fall time tf v dd =10v, v gs =4.5v, i d =0.5a, r l =10, r g =6 650 ns body diode forward voltage v sd v gs =0v, i s =0.35a 0.5 0.85 1.5 v wpt2n40 3 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) pnp transistor output characteristics dc current gain power derating transfer characteristics c-e saturation voltage vs. collector current 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power or i pp ambient temperature( o c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -5ma -10ma -20ma -30ma -40ma -50ma i c -collector current(ma) v ce -collector to emitter voltage(v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1e-3 0.01 0.1 1 10 v ce =-2v ta=-45 o c ta=25 o c i c -collector current(a) v be -base to emitter voltage(v) ta=85 o c 1e-3 0.01 0.1 1 10 1 10 100 1000 ta=25 o c ta=-45 o c v ce(sat) -collector saturation voltage(v) i c -collector current(a) ta=85 o c 1e-3 0.01 0.1 1 10 5 50 500 5000 ta=-45 o c ta=25 o c ta=85 o c h fe -dc current gain i c -collector current(a) wpt2n40 4 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
n-mosfet output characteristics on resistance vs. drain current on resistance vs. junction temperature transfer characteristics on resistance vs. gate-to-source voltage threshold voltage vs. temperature 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v gs =4.5v v gs =3.5v v gs =2.5v v gs =2.0v v gs =1.5v i ds -drain to source current(a) v ds -drain to source voltage(v) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t=125 o c t=25 o c t=-50 o c i ds -drain source current(a) v gs -gate to source voltage(v) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 100 150 200 250 300 350 400 v gs =4.5v v gs =2.5v v gs =1.8v r ds(on) -on resistance(m ) i ds -drain to source current(a) 1.01.52.02.53.03.54.04.5 100 150 200 250 300 350 400 450 500 550 600 i d =0.55a r ds(on) -on resistance(m ) v gs -gate to source voltage(v) -50 -25 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 v gs =4.5v,i d =0.55a r ds(on) -on resistance(m ) temperature( o c) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 i d =250ua v gs(th) -gate threshold voltage(v) temperature( o c) wpt2n40 5 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
capacitance body diode characteristics 012345678910 0 10 20 30 40 50 60 70 80 crss coss ciss v gs =0,f=1mhz c - capacitance (pf) vds-drain to source voltage(v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 t=25 o c i sd -source to drain current(a) v sd -source to drain voltage(v) t=150 o c wpt2n40 6 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions pdfn3x2-8l dimensions in millimeters symbol min. typ. max. a 0.700 0.800 0.900 b 0.240 0.300 0.350 c 0.080 0.150 0.200 d 2.900 3.000 3.050 e 1.900 2.000 2.100 e1 1.600 1.700 1.750 e 0.650 (bsc) l 0.200 0.275 0.400 l1 0 - 0.100 0 o 5 o 8 o wpt2n40 7 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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